Tuesday, June 19, 2012

1206.3759 (Zhao Liu et al.)

Fractional topological insulators in flat bands with higher Chern number    [PDF]

Zhao Liu, Emil J. Bergholtz, Heng Fan, Andreas M. Laeuchli
Lattice models forming bands with higher Chern number offer an intriguing possibility for new phases of matter with no analogue in continuum Landau levels. Here, we establish the existence of a number of new bulk insulating states at fractional filling in flat bands with Chern number C=N>1. In particular, we find compelling evidence for a series of stable states at \nu=1/(2N+1) for fermions as well as bosonic states at \nu=1/(N+1). By examining the topological ground state degeneracies and the excitation structure, we conclude that these states are abelian. We also explicitly demonstrate that these states are nevertheless qualitatively different from conventional quantum Hall (multilayer) states due to the novel properties of the underlying band structure.
View original: http://arxiv.org/abs/1206.3759

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